METALLURGIE ET CARACTERISATION DU TELLURURE DE ZINC DOPE A L'OXYGENECANEAU CATHERINE.1980; ; FRA; DA. 1980; 119 P.: ILL.; 30 CM; BIBL. 71 REF.; TH. DOCT.-ING.: PHYS. SOLIDES/PARIS 6/1980Thesis

Workshop on Organometallic Vapor Phase EpitaxyCANEAU, Catherine; BHAT, Rajaram.Journal of electronic materials. 1997, Vol 26, Num 10, issn 0361-5235, 167 p.Conference Proceedings

Reduction of threading dislocations in GaN on in-situ meltback-etched Si substratesISHIKAWA, Hiroyasu; SHIMANAKA, Keita.Journal of crystal growth. 2011, Vol 315, Num 1, pp 196-199, issn 0022-0248, 4 p.Conference Paper

Variation of the morphology of strained AlGaInAs quantum wells with substrate orientationCANEAU, Catherine; BHAT, Rajaram; NISHIYAMA, Nobuhiko et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2345-2352, issn 0022-0248, 8 p.Article

1.3 and 1.5 μm InP-based vertical cavity surface emitting lasersNISHIYAMA, Nobuhiko; CANEAU, Catherine; ZAH, Chung-En et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 402-403Conference Paper

The 19th American Conference on Crystal Growth and Epitaxy in conjunction with the 16th US Biennial Workshop on Organometallic Vapor Phase EpitaxyPASKOVA, Tania; CANEAU, Catherine; BHAT, Rajaram et al.Journal of crystal growth. 2014, Vol 393, issn 0022-0248, 178 p.Conference Proceedings

Calcite growth-rate inhibition by fulvic acid and magnesium ion—Possible influence on biogenic calcite formationREDDY, Michael M.Journal of crystal growth. 2012, Vol 352, Num 1, pp 151-154, issn 0022-0248, 4 p.Conference Paper

On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the meltVANHELLEMONT, Jan.Journal of crystal growth. 2012, Vol 352, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper

Growth and characterization of heavily selenium doped GaAs using MOVPEMAASSDORF, A; HOFFMANN, M; WEYERS, M et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 57-60, issn 0022-0248, 4 p.Conference Paper

High material-efficiency MOVPE of GaAs without degradation of photovoltaic performancesONITSUKA, R; SUGIYAMA, M; NAKANO, Y et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 53-56, issn 0022-0248, 4 p.Conference Paper

InP substrate evaluation by MOVPE growth of lattice matched epitaxial layersCEDERBERG, J. G; OVERBERG, M. E.Journal of crystal growth. 2011, Vol 315, Num 1, pp 48-52, issn 0022-0248, 5 p.Conference Paper

The LUCIFER project and production issues for crystals needed in rare events physics experimentsDAFINEI, I.Journal of crystal growth. 2014, Vol 393, pp 13-17, issn 0022-0248, 5 p.Conference Paper

Control of vapor feed from liquid precursors to the OMVPE processWOELK, E; DICARLO, R.Journal of crystal growth. 2014, Vol 393, pp 32-34, issn 0022-0248, 3 p.Conference Paper

Growth and characterization of Hexakis(thiourea)nickel(II) nitrate crystalsMUTHU, K; MEENAKASHISUNDARAM, S. P.Journal of crystal growth. 2012, Vol 352, Num 1, pp 158-162, issn 0022-0248, 5 p.Conference Paper

Morphological control of Mg_xZn_1―xO layers grown on Ga:ZnO/glass substrates for photovoltaicsZIQING DUAN; YICHENG LU; DU PASQUIER, Aurelien et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 190-193, issn 0022-0248, 4 p.Conference Paper

Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layerLOHN, Andrew J; XUEMA LI; KOBAYASHI, Nobuhiko P et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 157-159, issn 0022-0248, 3 p.Conference Paper

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum DotsDIMASTRODONATO, V; MERENI, L. O; YOUNG, R. J et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 119-122, issn 0022-0248, 4 p.Conference Paper

Efficient computation of population distribution of microdefects at any location in growing Czochralski silicon single crystalsSAMANTA, Gaurab; KULKARNI, Milind.Journal of crystal growth. 2014, Vol 393, pp 49-53, issn 0022-0248, 5 p.Conference Paper

16th International Conference on Metalorganic Vapor Phase EpitaxyJONG KYU KIM; KUECH, Thomas F; CANEAU, Catherine et al.Journal of crystal growth. 2013, Vol 370, issn 0022-0248, 358 p.Conference Proceedings

Characterization of nanocrystalline cobalt doped TiO₂ sol―gel materialKIRIT, Siddhapara; DIMPLE, Shah.Journal of crystal growth. 2012, Vol 352, Num 1, pp 224-228, issn 0022-0248, 5 p.Conference Paper

A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxyJHA, Smita; WIEDMANN, Monika K; KUECH, T. F et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 87-90, issn 0022-0248, 4 p.Conference Paper

Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxySATO, Tomonari; MITSUHARA, Manabu; IGA, Ryuzo et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 64-67, issn 0022-0248, 4 p.Conference Paper

Impurity effects in crystal growth from solutions: Steady states, transients and step bunch motionRANGANATHAN, Madhav; WEEKS, John D.Journal of crystal growth. 2014, Vol 393, pp 35-41, issn 0022-0248, 7 p.Conference Paper

Photovoltaic materials and crystal growth research and development in the Gigawatt eraCISZEK, T. F.Journal of crystal growth. 2014, Vol 393, pp 2-6, issn 0022-0248, 5 p.Conference Paper

Design Guidelines for Efficient Thermal Management of Mid-Infrared Quantum Cascade Lasers : Best-of-Session Papers from the 60th Electronic Components and Technology ConferenceCHAPARALA, Satish C; FENG XIE; CANEAU, Catherine et al.IEEE transactions on components, packaging, and manufacturing technology (2011. Print). 2011, Vol 1, Num 11-12, pp 1975-1982, issn 2156-3950, 8 p.Article